By Michel Houssa, Athanasios Dimoulas, Alessandro Molle
"Major advancements within the semiconductor are at the horizon by using second fabrics reminiscent of graphene and transition steel dichalcogenides for built-in circuits. This ebook presents the 1st complete therapy of the sector with an emphasis on functions in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, overlaying graphene for analog and photonic purposes, MoS2 (molybdenum disulfide) for good judgment functions and novel fabrics akin to silicene, germanene, stanene and phosphorene"-- Read more...
summary: "Major advancements within the semiconductor are at the horizon by using 2nd fabrics equivalent to graphene and transition steel dichalcogenides for built-in circuits. This publication presents the 1st accomplished remedy of the sector with an emphasis on purposes in nanoelectronic units. Chapters are divided via the 3 significant households of such fabrics, overlaying graphene for analog and photonic purposes, MoS2 (molybdenum disulfide) for common sense purposes and novel fabrics comparable to silicene, germanene, stanene and phosphorene"
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Extra resources for 2D materials for nanoelectronics
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While graphene is a zero-gap semiconductor, graphite is a semimetal with a small band overlap of ≈41 meV. The evolution of the band structure from graphene to g raphite has been studied in Reference 34. 2 meV) if up to γ4 is taken into account, the band overlap in AB-stacked multilayer graphene increases with an increasing number of layers. It is within 10% of the band overlap of graphite for 11 or more layers. The linear spectrum at the Dirac points is present in case of an odd number of layers .
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