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By Michel Houssa, Athanasios Dimoulas, Alessandro Molle

"Major advancements within the semiconductor are at the horizon by using second fabrics reminiscent of graphene and transition steel dichalcogenides for built-in circuits. This ebook presents the 1st complete therapy of the sector with an emphasis on functions in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, overlaying graphene for analog and photonic Read more...

summary: "Major advancements within the semiconductor are at the horizon by using 2nd fabrics equivalent to graphene and transition steel dichalcogenides for built-in circuits. This publication presents the 1st accomplished remedy of the sector with an emphasis on purposes in nanoelectronic units. Chapters are divided via the 3 significant households of such fabrics, overlaying graphene for analog and photonic purposes, MoS2 (molybdenum disulfide) for common sense purposes and novel fabrics comparable to silicene, germanene, stanene and phosphorene"

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Levy, S. A. Burke, K. L. Meaker, M. Panlasigui, A. Zettl, F. Guinea, A. H. C. Neto and M. F. Crommie, Science 329, 544, 2010. 52. E. Stolyarova, D. Stolyarov, K. Bolotin, S. Ryu, L. Liu, K. T. Rim, M. Klima et al. Nano Lett. 9, 332, 2008. 53. T. Georgiou, L. Britnell, P. Blake, R. V. Gorbachev, A. Gholinia, A. K. Geim, C. Casiraghi and K. S. Novoselov, Appl. Phys. Lett. 99, 093103, 2011. 54. M. Ramezani Masir, D. Moldovan and F. M. Peeters, Solid State Commun. 76, 175–176, 2013. 1 Introduction...................................................................................................

While graphene is a zero-gap semiconductor, graphite is a semimetal with a small band ­overlap of ≈41 meV. The evolution of the band structure from graphene to g­ raphite has been studied in Reference 34. 2 meV) if up to γ4 is taken into account, the band overlap in AB-stacked multilayer graphene increases with an increasing number of layers. It is within 10% of the band overlap of graphite for 11 or more layers. The linear spectrum at the Dirac points is present in case of an odd number of layers [35].

Rycerz and C. W. J. Beenakker, Phys. Rev. Lett. 96, 246802, 2006. 23. K. Ziegler, Phys. Rev. Lett. 80, 3113, 1998. 24. P. M. Ostrovsky, I. V. Gornyi and A. D. Mirlin, Phys. Rev. B 74, 235443, 2006. 25. J. H. Chen, C. Jang, S. Xiao, M. Ishigami and M. S. Fuhrer, Nat. Nanotechnol. 3, 206, 2008. 26. R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres and A. K. Geim, Science 320, 1308, 2008. 27. Z. Q. Li, E. A. Henriksen, Z. Jiand, Z. Hao, M. C. Martin, P.

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