By Leonard J. Brillson
"An crucial consultant to digital fabric Surfaces and Interfaces is a streamlined but entire creation that covers the elemental actual houses of digital fabrics, the experimental ideas used to degree them, and the theoretical equipment used to appreciate, are expecting, and layout them. beginning with the basic digital homes of semiconductors and electric measurements of semiconductor interfaces, this article introduces scholars to the significance of characterizing and controlling macroscopic electric homes through atomic-scale concepts. The chapters that stick with current the entire diversity of floor and interface innovations now getting used to symbolize digital, optical, chemical, and structural homes of digital fabrics, together with semiconductors, insulators, nanostructures, and organics. the basic physics and chemistry underlying every one strategy is defined in enough intensity for college students to grasp the elemental rules, with a variety of examples to demonstrate the strengths and obstacles for particular functions. in addition to references to the main authoritative assets for broader discussions, the textual content comprises net hyperlinks to extra examples, mathematical derivations, tables, and literature references for the complex pupil, in addition to execs in those fields. This textbook fills a spot within the present literature for an entry-level direction that offers the actual houses, experimental suggestions, and theoretical tools crucial for college students and pros to appreciate and perform solid-state electronics, physics, and fabrics technology research"-- Read more...
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Extra info for An essential guide to electronic material surfaces and interfaces
The effective barrier is lowered from q????SB0 to ????SB with an applied electric ﬁeld. M. 2007 . 12) so that the barrier ????SB0 can be extracted from a plot of ln J versus applied forward voltage. 13) are much less than one so that n ≈ 1. However, a variety of physical processes can increase n. These include tunneling through the barrier [9,10], intermediate layers with new dielectric and transport properties [10,11], and recombination or trapping at states near the interface and within the semiconductor band gap .
31) C2 = [qNA NB ????A ????B ]∕[2(????A NA + ????B NB )(Vbi –V)] for an applied bias V. 26) using the intercept value of Vbi in a plot of 1∕C2 versus V. This analysis is complicated by any impurity gradients or near-interface charge . Among such capacitance techniques, the most reliable are measurements of interface charge at the heterojunction with known doping profiles . Likewise, carrier recombination, tunneling, and shunt currents can seriously affect the interpretation of I–V measurements.
13. Among the I–V, C–V, and IPS techniques to measure Schottky barrier heights, which would be easiest to interpret for: (a) diodes with two different ????SB under the same metal contact, (b) diodes on an indirect band gap semiconductor, and (c) diodes on a semiconductor with a voltage-dependent dielectric permittivity? References 1. K. (1998) Semiconductor Material and Device Characterization, 2nd edn, Wiley-Interscience, New York, Chapter 3 and reference therein. 2. J. (1982) The structure and properties of metal-semiconductor interfaces.