Download Compact Modeling: Principles, Techniques and Applications by Gennady Gildenblat PDF

By Gennady Gildenblat

Compact types of circuit parts are versions which are sufficiently uncomplicated to be included in circuit simulators and are sufficiently exact to make the end result of the simulators helpful to circuit designers. The conflicting targets of version simplicity and accuracy make the compact modeling box a thrilling and not easy learn zone for machine physicists, modeling engineers and circuit designers.

The types of MOS transistors underwent progressive swap within the previous few years and at the moment are according to new rules. the new versions of diodes, passive components, noise resources and bipolar transistors have been constructed alongside the extra conventional strains. Following this evolutionary improvement they turned hugely subtle and lots more and plenty extra able to mirror the elevated calls for of the complex built-in circuit know-how. The latter relies on the compact versions for the shortening of the layout cycle and casting off the weather of overdesign that is usually bad in today’s aggressive atmosphere. even as, statistical modeling of semiconductor units acquired new importance following the dramatic aid of the equipment dimensions and of the ability offer voltage. ultimately, regardless of the complexity of the fabrication procedure, the multi-gate MOS transistors at the moment are heavily thought of for the aim of controlling the small geometry effects.

Most of the hot texts on compact modeling are constrained to a specific type of semiconductor units and don't offer complete assurance of the sphere. Having a unmarried complete reference for the compact types of most ordinarily used semiconductor units (both energetic and passive) represents an important virtue for the reader. certainly, numerous forms of semiconductor units are mostly encountered in one IC layout or in one modeling aid team. Compact Modeling includes quite often the cloth that once a number of years of IC layout purposes has been came upon either theoretically sound and essentially major. Assigning the person chapters to the teams liable for the definitive paintings at the topic assures the top attainable measure of workmanship on all the lined models.

Compact Modeling additionally comprises chapters at the MOSFET noise thought, benchmarking of MOSFET compact versions, modeling of the ability MOSFET, and an summary of the bipolar modeling box. It concludes with chapters describing the variety modeling together with a few fresh advancements within the field.

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Extra resources for Compact Modeling: Principles, Techniques and Applications

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G. floating body, and valence band tunneling current) and include a detailed description of parasitic effects. We discuss both the theoretical developments and verification of the model against test data and TCAD simulations with particular emphasis on the interplay between the model structure and its simulation capabilities. 1 Introduction Compact models of SOI devices provide a bridge between the manufacturing process and circuit design. They are required to accurately reproduce the device characteristics responsible for placing SOI technology in the mainstream for low-power high performance ULSI applications [12, 46].

22 Network of parasitic resistances in PSP In order to provide an additional flexibility during the model parameter extraction, PSP allows for the difference in the oxide thickness in the active (TOX) and the overlap (TOXOV) regions. 96) where LOV denotes the length of the overlap region and WE,CV is the effective channel width for the evaluation of the terminal charges. 2 Parasitic Resistances Starting with PSP103 one can include series resistances for both quasi-static and non-quasi-static PSP models.

Electron Devices 37(5), 1323–1333 (1990) 29. : A unified model for the flicker noise in metaloxide-semiconductor field-effect transistors. IEEE Trans. Electron Devices 37(3), 654–665 (1990) 30. : A physics-based, SPICE-compatible nonquasi-static MOS transient model based on the collocation method. Jpn. J. Appl. Phys. 37(2A), 119–121 (1998) 31. : An improved MOSFET model for circuit simulation. IEEE Trans. Electron Devices 45(1), 134–148 (1998) 32. : Zener tunneling in semiconductors. J. Phys. Chem.

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